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1 article(s) from Damodaran, Krishna K

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

Ragesh Kumar T P,
Sangeetha Hari,
Krishna K Damodaran,
Oddur Ingólfsson and
Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

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Figure 1: Molecular structure of (a) 1,1-dichloro-1-silacyclohexane (cyclo-C₅H₁₀SiCl₂) and (b) silacyclohexan...

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Figure 2: Negative ion yield curve for the principal fragments formed by the electron attachment dissociation...

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Figure 3: Positive ion mass spectra of (a) DCSCH and (b) SCH, both spectra are recorded at an electron impact...

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Figure 4: Pillars grown by EBID from the precursors DCSCH (left) and SCH (right). The precursor pressure was ...

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Figure 5: Measured (a) pillar base diameter, (b) pillar height and (c) heights of the cone-shaped upper part ...

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Figure 6: (a) Pillar volume determined from the measured pillar diameter, pillar height, tip cone height and ...

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Figure 7: a) Schematic showing the order of pillar deposition in a circular array around a central dot; b) sc...

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Figure 8: Tilted (45°) and normal view of two sets of nine closely spaced pillars deposited in a circular arr...

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Figure 9: Square arrays of pillars deposited with the indicated beam exposure time and neighbouring pillar di...

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Figure 10: Monte Carlo simulation of the angular distribution of electrons emitted from a flat Si substrate wi...

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Published 10 Nov 2017

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